The SuperJunction MOS-controlled thyristor (SJ-MCT) with low power loss for high-power switching applications

Wanjun Chen,Jinhan Zhang,Bo Zhang,Huaping Jiang,Zhaoji Li

DOI: https://doi.org/10.1109/ICSICT.2012.6466725

2012-01-01

Abstract:In this paper, a novel MOS controlled-thyristor (MCT) that employs the SuperJunction concept (SJ-MCT) has been investigated, for the first time. The SJ-MCT offers significant improvement in the on-state voltage drop (Von) and turn-off switching loss (Eoff) compared with the state-of-the-art conventional MCT. In the on-state, due to the p-type pillar of the SJ structure in the SJ-MCT drift region, an effective collector area of the lower PNP transistor in MCT is enlarged, which results in higher conductivity modulation and then lower Von. For the turn-off of SJ-MCT, the introduction of SJ structure in the drift region is helpful to extract the minority carriers stored in the drift region during the forward conduction, which leads to lower turn-off time and then lower Eoff. In addition, the SuperJunction structure can deliver charge balance in the drift region results in smaller drift lengths and higher doping levels, which also contributes to better on-state/switching trade-off. At the condition of anode current density of 400 A/cm2, the Von and Eoff of SJ-MCT is 1.12 V and 6.7mJ, compared with 1.34V and 11 mJ for MCT, respectively.