Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor)

J. Won,Doohyung Cho,Changsub Kwak,Kunsik Park

DOI: https://doi.org/10.5573/IEIE.2016.53.5.069

2016-05-25

Abstract:Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current (I peak ) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage (V th ) of on/off-FET. In this paper, we have demonstrated the effect of V th adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = 0.465 mm 2 ) show forward voltage drop (V F ) of 1.25 V at 100 A/cm 2 and I peak of 290 A and di/dt of 5.8 kA/µs at V A = 800 V. While these characteristics are unaltered by V th adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of 100 A/cm 2 when the V th adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

Physics,Engineering,Materials Science