Effects of Rare-Earth Dopants on the Thermally Grown Al2o3/Ni(Al) Interface: the First-Principles Prediction

Guoqiang Lan,Yiren Wang,Yong Jiang,Hongming Zhou,Danqing Yi
DOI: https://doi.org/10.1007/s10853-013-7968-3
IF: 4.5
2014-01-01
Journal of Materials Science
Abstract:We report a first-principles study for assessing the roles of rare-earth (RE) dopants (Y and Ce) on adhesion of the thermally grown α-Al2O3/γ-Ni(Al) interface. The effects on adhesion of temperature, stoichiometry, Al chemical activity, and Y/Ce segregation are thoroughly examined, and the results are compared with those of impurity S. A major discovery is that very similar to (perhaps more efficiently than) Hf, doping with Y provides several concurrent benefits, including increasing the adhesion of the weak stoichiometric interface by a factor of ~3. Doping with Ce almost doubles the adhesion of the stoichiometric interface, but it may reduce the adhesion of the strong Al-rich interface by ~20 %. Also, notably, Ce has a very strong capability of gettering detrimental S in Ni, which is almost triple those of Y and Hf.
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