Investigation of Al/CeO2 interfacial relationships for epitaxial growth of Al on CeO2 substrates: first-principles calculation

Ying Ling,Xiuliang Zou,Zijian Chen,Hong Yan
DOI: https://doi.org/10.1007/s10853-024-09868-y
IF: 4.5
2024-06-20
Journal of Materials Science
Abstract:CeO 2 has high elastic modulus and thermal stability, as well as good surface effects, making it ideal as a reinforcement for aluminum matrix composites. In this paper, the interfacial relationships between Al and CeO 2 was studied by first-principles calculation, and the nucleation mechanism of aluminum matrix growth on CeO 2 substrate was discussed. First, the Al/CeO 2 interface matching crystal surface was identified as the Al(111)/CeO 2 (111) interface. Then, the surface work function was calculated for all surfaces constituting the Al(111)/CeO 2 (111) interface, and the results showed that the Al(111) loses charge more easily than CeO 2 (111). Subsequently, the interface energy and work of adhesion of the Al(111)/CeO 2 (111) interface were calculated, and the results showed that the interface energy of O1–Al was the smallest (0.07 J/m 2 ), the work of adhesion of O2 interface energy of O1–Al was the smallest (0.07 J/m 2 ), the work of adhesion of O2–Al was the largest (9.36 J/m 2 )Al was the largest (9.36 J/m 2 ). Finally, the combined properties of the Al(111)/CeO 2 (111) interface were analyzed by the electronic properties at the interface, and the results showed that The Al(111)/CeO 2 (111) interface is a mixture of ionic and covalent bonds. Therefore, the calculated results confirm that the effectiveness of CeO 2 as a heterogeneous nucleation substrate for Al. This study provides a theoretical basis for the nucleation mechanism of the heterogeneous nucleation interface between CeO 2 and aluminum matrix.
materials science, multidisciplinary
What problem does this paper attempt to address?