Abstract:Based on the free electronic model and Büttike's theory on shot noise, we investigated the shot noise of spin electrons in ferromagnetic /non-ferromagnetic insulator /spin filter layer /normal metal (FM /I/SF/NM) quasi-one-dimensional single spin filter tunneling junctions. The calculation results show that the barrier heights and thicknesses of the insulator and spin filter layers strongly affect the values and phases of the Fano factors of spin electrons. Compared with the traditional sandwich structures of ferromagnetic/spin filter layer/normal metal (FM/SF/NM) and ferromagnetic/non-ferromagnetic insulator/normal metal (FM/I/NM), when the thicknesses of the insulator and spin filter layers are very small, in single spin filter magnetic heterojunctions (FM/I/SF/NM), the insulator layer can suppress the Fano factors, while the spin filter layer is easier to separate the Fano factors of electrons whose spin directions are different. Further analysis shows that whether the Rashba coupling in the spin filter layer has an obvious influence on the Fano factors of spin electrons depends on the thickness of the spin filter layer. On the other hand, the Fano factors are strongly dependent on the sizes and directions of the molecular fields of the ferromagnet and spin filter layers. In addition, the electrons are incident with low energy or high energy, and the barrier heights and thicknesses of the spin filter layer and the thicknesses of the insulation layer have a significant effect on the spin-direction-dependent Fano factors of electrons.

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