Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Performance Enhancement in Chemical Vapor Deposition Graphene Field-Effect Transistors by High-Κ Dielectric Screening

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Dielectric screening enhanced performance in graphene FET.

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

Graphene field effect transistors with mica as gate dielectric layers.

Optimizing the fabrication process for high performance graphene field effect transistors.

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Significant Performance Enhancement in AlGaN/GaN High Electron Mobility Transistor by High-Κ Organic Dielectric

Computational Study of Graphene-Based Vertical Field Effect Transistor

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

The Influence of Chemical Solvents on the Properties of Cvd Graphene

Improved Contact Resistivity and Enhanced Mobility of Metal-Graphene FET by Inserting Ultra-Thin MoOx Layer at Source/drain Region

Wafer-scalable High-Performance CVD Graphene Devices and Analog Circuits

Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

Forming Semiconductor/dielectric Double Layers by One-Step Spin-Coating for Enhancing the Performance of Organic Field-Effect Transistors

Simulation Study of Channel Mobility and Device Performance Dependence on Gate Stack in Graphene Field-Effect Transistors

Investigating the Stability of Molecule Doped Graphene Field Effect Transistors

Large-area Potassium-Doped Highly Conductive Graphene Films for Electromagnetic Interference Shielding