Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Dielectric screening enhanced performance in graphene FET.

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Ionic Screening of Charged-Impurity Scattering in Graphene

Performance Enhancement in Chemical Vapor Deposition Graphene Field-Effect Transistors by High-Κ Dielectric Screening

Quantifying the effect of ionic screening with protein-decorated graphene transistors

Electrochemical Gate-Controlled Charge Transport in Graphene in Ionic Liquid and Aqueous Solution

Diffusive Charge Transport in Graphene on SiO2

Improving Channel Mobility in Graphene-Fets by Minimizing Surface Phonon Scattering - A Simulation Study

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

Simulation Study of Channel Mobility and Device Performance Dependence on Gate Stack in Graphene Field-Effect Transistors

Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering.

HfO2 Dielectric Thickness Dependence of Electrical Properties in Graphene Field Effect Transistors with Double Conductance Minima

Surface Polar Phonon Dominated Electron Transport in Graphene

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene.

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Measurement of high carrier mobility in graphene in an aqueous electrolyte environment

Graphene field effect transistors with mica as gate dielectric layers.

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

Mobility in Graphene Double Gate Field Effect Transistors

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors