Simulation of Temperature Distribution in HFCVD Diamond Films Growth on WC-Co Drill Tools in Large Quantities

Lei Cheng,Jianguo Zhang,Xinchang Wang,Tao Zhang,Bin Shen,Fanghong Sun
DOI: https://doi.org/10.4028/www.scientific.net/kem.589-590.399
2013-01-01
Key Engineering Materials
Abstract:The substrate temperature distribution in hot filament chemical vapor deposition (HFCVD) diamond films growth on drill tools in large quantities are simulated by the finite volume method (FVM), adopting a detailed 3-D computational model corresponding with the actual reactor. Firstly, the correctness of the simulation model is verified by comparing the temperature data obtained from the simulation with that measured in an actual depositing process, and the results show that the error between them is less than 3%. Thereafter, the influences of several parameters are studied, including the filament separation (D), the length of the filament (L) and the filament-substrate distance (H). The simulation results show the three parameters have different effects on the distribution of temperature field. The influence of D is the greatest, L is followed and then H. The simulation has important theoretical guidance on both the development of HFCVD deposition equipment using for the diamond coating on tools with complex shapes in large quantities and the research of related production process.
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