Abstract:In high-resolution transmission electron microscopy (HRTEM) images of heterostructures, it is always difficult to accurately determine the interface position and identify dislocations in a large field of view at tens to hundreds of nanometers due to the small lattice differences. However, in the heterostructure, the determination of the interface position is the key to obtain the true mismatch stress/strain field of the interface. Due to the magnifying effect of the digital moiré method on small differences, digital moiré technology was applied to determine Ge/Si heterostructure interfaces and large-area identification interface dislocations in HRTEM lattice diagrams in this study. By optimizing the frequency and angle of the reference lattice, the interface and dislocation position are clearly and intuitively displayed. How to accurately determine the position of the heterostructure interface and the dislocation of the large-area recognition interface from HRTEM images are studied through simulation experiments. The results show that when the frequency of the reference lattice and the specimen lattice are close, and the angle between them is within 10°, the position of the heterostructure interface can be accurately and intuitively determined by the naked eye according to the distortion characteristics of the moiré fringe. When the frequency of the reference lattice is 0.7 to 0.9 times of the specimen lattice, and the rotation angle is within 8°, the visually clear crossover phenomenon of the moiré fringes is used for large-area identification of interface dislocations. Using the phase measurement interface position sensitivity can reach the Å level. Using the phase-shifting digital moiré method the strain field on the dislocation core at the Ge/Si heterostructure interface and the interface stress distribution were quantitatively analyzed. Compared with the Peierls-Nabarro dislocation model and the Foreman dislocation model, Foreman's variable factor α = 4 is more suitable for describing the strain field of misfit dislocations on the Ge/Si heterostructure interface.

Full-field strain mapping at a Ge/Si heterostructure interface

Application of Digital Phase Shifting Moiré Method in Interface and Dislocation Location Recognition and Real Strain Characterization from HRTEM Images.

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moire method

Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging

Study of strain distribution in GeSi/Si strained heterostructure

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/Sige/Si Heterostructures

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Automatic Detection of Defect Positions Including Interface Dislocations and Strain Measurement in Ge/Si Heterostructure from Moiré Phase Processing of TEM Image

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Electronic structure of the Ge/Si(105) hetero-interface

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(001) heteroepitaxy

Origin of residual strain in heteroepitaxial films

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Separation of Wafer Bonding Interface from Heterogenous Mismatched Interface Achieved High Quality Bonded Ge-Si Heterojunction

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction