Abstract:Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a> and 0.02 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>) in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. We have studied the morphological and structural properties of PSi layers using the techniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) and Gravimetric method. The Xray Diffraction data shows that the structure aspect of PSi layers remains crystalline as well as the decreasing of diffraction angle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of the lattice parameter values of PSi structures with increasing of etching times from 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) with increasing of etching times, and the resistivity of silicon substrates. The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates resistivities, while the values of the thickness of walls between pores has been varied from (1.25 to 0.03 micrometer) with increasing of etching times and silicon substrates resistivities. The pore shape of pores has been varied from Cylindrical to Rectangular and to Starful with varied of etching conditions. Further the measured specific surface area of PSi layers has been increased from (7.43 to 235.35 m2/cm3) with increasing of etching times and silicon substrates resistivities.

Fabrication, characterization, and application in nanoenergetic materials of uncracked nano porous silicon thick films

Sandwich-Lithiation and Longitudinal Crack in Amorphous Silicon Coated on Carbon Nanofibers

Al-assisted Anodic Etched Porous Silicon

Investigation of crack patterns and cyclic performance of Ti-Si nanocomposite thin film anodes for lithium ion batteries

Study on Fabrication and Thermal Analysis of Porous Silicon Nanoenergetic Materials

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

The Influence of Microstructure on Optical Properties of Porous Silicon

Large-scale Fabrication, 3D Tomography, and Lithium-Ion Battery Application of Porous Silicon.

Investigation of Selectively Forming Nano-Porous Silicon for the Application of MEA

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities

Thermophysical Characteristics of the Porous Silicon Samples Formed by Electrochemical, Chemical and Combined Etching Methods

Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination

Studies on microstructure and photoluminescence property of porous silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Fabrication of Solid State Nanopore in Thin Silicon Membrane Using Low Cost Multistep Chemical Etching