A Diode End-Pumped Passively Q-switched Nd:YAG/KTA Raman Laser

W. X. Lan,Q. P. Wang,Z. J. Liu,X. Y. Zhang,F. Bai,H. B. Shen,L. Gao
DOI: https://doi.org/10.1016/j.ijleo.2013.05.154
IF: 3.1
2013-01-01
Optik
Abstract:A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5mm×5mm×25mm is used as the Raman active medium and its 234cm−1 Raman mode is employed to finish the conversion from 1064nm fundamental laser to 1091nm Raman laser. A 2mm thick Cr4+:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5W, the first-Stokes power of 250mW is obtained with a pulse repetition frequency of 14.5kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2μJ. Pulse width is measured to be 12.6ns and peak power is 1.4kW.
What problem does this paper attempt to address?