Abstract:We report on a high-power and narrow-linewidth nanosecond pulsed intracavity crystalline Raman laser at 1.7 µm. Driven by an acousto-optically Q-switched 1314 nm two-crystal Nd:YLF laser, the highly efficient cascaded YVO4 Raman laser at 1715nm was obtained within the well-designed L-shaped resonator. Thanks to the absence of spatial hole burning in the stimulated Raman scattering process, significant spectral purification of second-Stokes radiation was observed by incorporating a fused silica etalon in the high-Q fundamental cavity. Under the repetition rate of 4 kHz, the highest average output power for single longitudinal mode operation was up to 2.2 W with the aid of precision vibration isolation and precision temperature controlling, corresponding to the pulse duration of ∼2.8 ns and the spectral linewidth of ∼330 MHz. Further increasing the launched pump power, the second-Stokes laser tended toward be always multimode, and the maximum average output power amounted to 4.8 W with the peak power of ∼0.8 MW and the spectral linewidth of ∼0.08 nm. The second-Stokes emission was near diffraction limited with M2 < 1.4 across the whole pump power range.

Sub-nanosecond, high peak power Yb:YAG/Cr4+:YAG/YVO4 passively Q-switched Raman micro-laser operating at 1134 nm

Sub-Nanosecond, High Peak Power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> Passively Q-Switched Raman Microchip Laser with the Emission of Multiple Pulses

Sub-Nanosecond, High Peak Power Yb:YAG/Cr4+:YAG/YVO4 Passively Q-Switched Raman Microchip Laser with the Emission of Multiple Pulses

YVO4 Raman laser pumped by a passively Q-switched Yb:YAG laser.

Compact Passively Q-switched Green Laser with Periodically Poled MgO:LiNbO 3

Passively Q-Switched Diode-Pumped Nd : Yvo4/Cr4+: Yag Single-Frequency Microchip Laser

Compact passively Q-switched Raman laser at 1176 nm and yellow laser at 588 nm using Nd3+:YAG/Cr4+:YAG composite crystal

9.80-W and 0.54-Mj Actively Q-switched Nd:YAG/Nd:YVO4 Hybrid Gain Intracavity Raman Laser at 1176 Nm.

Composite Yb:YAG/Cr 4+ :YAG/YAG crystal passively Q-switched lasers at 1030 nm

High-power and narrow-linewidth nanosecond pulsed intracavity crystalline Raman laser operating at 1.7 µm

Cr:Yag Passively Q-Switched Single-Frequency Nd:Yvo4 Ring Cavity Laser

103-W Actively Q-switched Nd:YVO4/YVO4 Folded Coupled-Cavity Raman Laser at 1176 Nm

Passively Q-switched Yb : YAG laser with Cr 4 1 : YAG s the saturable absorber

Passively-Q-switched Yb:YAG laser with Cr:YAG as a saturable absorber

A Diode End-Pumped Passively Q-Switched Nd:Yag/Kta Raman Laser

Sub-nanosecond Nd:YAG/Cr4+:YAG Crystal Laser Operating at 0.9 Μm

Cr 4+ :YAG As a Passive Q-Switch in a Diode-Pumped Cw Nd:YVO 4 Laser

Sub-nanosecond passively Q -switched Nd:YVO 4 /Cr 4+ :YAG microchip lasers

High-Peak-Power Passively Q-Switched Laser at 589 nm with Intracavity Stimulated Raman Scattering

Dioder-pumped Self-Q-switched Cr 4+ , Nd 3+ : YAG Laser with Amplifier

High-peak-power, Short-Pulse-width, LD End-Pumped, Passively Q-switched Nd:YAG 946nm Laser