A KTiOAsO 4 Raman laser

Z. Liu,Q. Wang,X. Zhang,Z. Liu,J. Chang,H. Wang,S. Zhang,S. Fan,W. Sun,G. Jin,X. Tao,S. Zhang,H. Zhang
DOI: https://doi.org/10.1007/s00340-009-3377-3
2009-01-01
Applied Physics B
Abstract:Efficient nanosecond stimulated Raman scattering is observed in KTiOAsO 4 within an intracavity Raman laser configuration. A diode-end-pumped acousto-optically Q -switched Nd:YAG laser emitting at 1064.2 nm is employed as the pumping source. And efficient generation of the first-Stokes line at 1091.5 nm is observed. With an incident diode power of 8.11 W, a first-Stokes power of 1.38 W is obtained at a pulse repetition rate of 25 kHz, corresponding to a diode-to-Stokes conversion efficiency of 17%. The pulse width is 6.5 ns and the peak power is 8.5 kW. The performance characteristics of the device demonstrate that KTiOAsO 4 is competent and reliable for nanosecond Raman lasers.
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