A diode side-pumped KTiOAsO4 Raman laser.

Zhaojun Liu,Qingpu Wang,Xingyu Zhang,Sasa Zhang,Jun Chang,Zhenhua Cong,Wenjia Sun,Guofan Jin,Xutang Tao,Youxuan Sun,Shaojun Zhang
DOI: https://doi.org/10.1364/OE.17.006968
IF: 3.8
2009-01-01
Optics Express
Abstract:A KTiOAsO(4) Raman laser is realized within a diode side-pumped acousto-optically Q-switched Nd:YAG laser. Efficient nanosecond first-Stokes generations at 1091.4 nm are obtained with three 30-mm-long KTA crystals. Under an incident diode power of 60.9 W and a pulse repetition rate of 4 kHz, a first-Stokes power of 4.55 W is obtained, corresponding to a diode-to-Stokes conversion efficiency of 7.5%. The single pulse energy is up to 1.14 mJ and the peak power is 18.0 kW.
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