A KTiOAsO<sub>4</sub> Raman laser

Z. Liu,Q. Wang,X. Zhang,Z. Liu,J. Chang,H. Wang,S. Zhang,S. Fan,W. Sun,G. Jin,X. Tao,S. Zhang,H. Zhang
DOI: https://doi.org/10.1007/s00340-009-3377-3
2009-01-01
Abstract:Efficient nanosecond stimulated Raman scattering is observed in KTiOAsO4 within an intracavity Raman laser configuration. A diode-end-pumped acousto-optically Q-switched Nd:YAG laser emitting at 1064.2 nm is employed as the pumping source. And efficient generation of the first-Stokes line at 1091.5 nm is observed. With an incident diode power of 8.11 W, a first-Stokes power of 1.38 W is obtained at a pulse repetition rate of 25 kHz, corresponding to a diode-to-Stokes conversion efficiency of 17%. The pulse width is 6.5 ns and the peak power is 8.5 kW. The performance characteristics of the device demonstrate that KTiOAsO4 is competent and reliable for nanosecond Raman lasers.
What problem does this paper attempt to address?