The effect of B-site acceptor doping on the microstructure and electric properties of NaNbO3 ceramics
Fen Ye,Xiangping Jiang,Xiaokun Huang,Renfen Zeng,Chao Chen,Xin Nie,Hao Cheng
DOI: https://doi.org/10.1007/s10854-021-07640-5
2022-01-06
Abstract:Enhancement of the antiferroelectric phase and exhibition of a double P–E hysteresis loop of NaNbO3 (NN) has been a hot research topic in recent years. In this work, polycrystalline ceramic Na (Nb0.99M0.01) O2.995 (M = Si, Sn and Hf) was successfully prepared by solid-state reaction method. The “pinning” effect of oxygen vacancy and defect dipole in samples obviously influence the performance of microstructure and electric properties. doule-like P–E loop can be found in NN-Sn at room temperature, this characteristic is the interaction of oxygen vacancy with domain walls and the defect polarization of defect dipole. More A-site defects exist in NN-Si and NN-Sn which make domain wall motion easier, and square P–E loops can appear at room temperature. The breakdown strength of NN-Hf is improved, because Hf4+ doping raises the energy barrier of AFE → FE. So the square P–E loop doesn’t appear in NN-Hf before breakdown at room temperature. The antiferroelectric phase is more easily induced in NN at high temperature, and double P–E loops appear in all samples at 120 °C.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied