Abstract:Colossal permittivity ceramic materials (CP, >10 3 ) have the potential of miniaturization and convenience for electric components. Unfortunately, they are often accompanied by high dielectric loss (>0.5), which limits their application. In this work, Ti 1- x (Tm 0.5 Nb 0.5 ) x O 2 (TTNO x ) ceramics are prepared via the solid state method. The results show that the main phase of doped samples maintains the rutile TiO 2 phase and the average grain size decreases with increasing additive amounts. Gradually, the Tm 2 Ti 2 O 7 phase appears and subsequently it is converted to the TmNbTiO 6 phase. Furthermore, the low dielectric loss and colossal permittivity are synchronously achieved in doped ceramic samples by defect regulation. Especially, high permittivity of ∼1.61 × 10 5 , low dielectric loss of ∼0.078 (1 kHz) and the AC resistivity of ∼10 −9 s/cm are achieved in x = 0.01 samples at room temperature with good frequency and temperature stability. The true origin is deeply discussed by some analyses of XRD, XPS, SEM, Raman spectra and the complex impedance. The results show that enhanced dielectric performance originates from this fact that the addition of Nb and Tm ions triggers defective dipoles formation in grains, such as TiTi′/TmTi′−VO..−TiTi′/TmTi′ , TiTi′/TmTi′−NbTi∙ , pinning the electron and limiting its long-range transition. Furthermore, the grain boundary resistivity is crucial to the ceramic conductivity. This study has driving implications for the application of colossal permittivity ceramic materials.

Effects of structural defects on dielectric properties of Nb-doped SrTiO3-based ceramics

High dielectric permittivity and ultralow dielectric loss in Nb-doped SrTiO 3 ceramics

Colossal Permittivity and Ultralow Dielectric Loss in Nb-doped SrTiO 3 Ceramics

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Colossal permittivity and ultralow dielectric loss in SrTi1-Nb O3 ceramics sintered at different atmospheres via defect chemistry improvement

Dielectric properties and relaxation behavior of Sm substituted SrTiO3 ceramics sintered in nitrogen atmosphere

First-Principles Study of the Influences of Oxygen Defects Upon the Electronic Properties of Nb-Doped Tio2 by Gga + U Methods

Colossal dielectric behavior of Nb-doped SrTiO 3 single crystal

Enhanced dielectric performance of Niobium and Thulium modified rutile TiO 2 ceramics by defect regulation

Colossal permittivity and low dielectric loss in (Li, Nb) co-doped SrTiO3 ceramics with high frequency and temperature stability

From structure to conduction mechanism: investigating the effect of sintering atmosphere and the role of Mn in Ca0.6Sr0.4TiO3 ceramics

Giant permittivity in Nb-doped SrTiO3 single crystal: Compositional gradient and local structure

Defect-related broadband dielectric loss mechanisms of Na<sub>1/2</sub>Sm<sub>1/2</sub>Ti<sub>1-z</sub>(Al<sub>1/2</sub>Nb<sub> 1/2</sub>)zO<sub>3</sub> ceramics

Defect-related broadband dielectric loss mechanisms of Na1/2Sm1/2Ti1–(Al1/2Nb1/2) O3 ceramics

Dielectric Responses of (Zn0.33Nb0.67) x Ti1- xO2 Ceramics Prepared by Chemical Combustion Process: DFT and Experimental Approaches

The Effect of TiO2 on the Dielectric Performance of ZrO2 and Nb2O5 Pre-Doped CaCu3Ti4O12 Ceramics

Effect of NiO-doping on the microstructure and the dielectric properties of CaCu3Ti4O12 ceramics

Defect-related broadband dielectric loss mechanisms of Na1/2Sm1/2Ti1–z(Al1/2Nb1/2)zO3 ceramics

High Insulation Resistivity and Ultralow Dielectric Loss in La-Doped SrTiO3 Colossal Permittivity Ceramics through Defect Chemistry Optimization

Microwave Dielectric Properties of Al-doped Ba4(Sm,Nd)9.33Ti18O54 Ceramics Added with TiO2 and Sintered in Oxygen

The relationship between the defect structure and dielectric properties of (La, Li) co-doped SrTiO3