Abstract:The micro-electromechanical system (MEMS) safety-and-arming (S&A) device has the features of integration and miniaturization, which is one of the important directions of weapon development. Confined by the fabrication process, the silicon-based devices are too fragile, and the metal-based devices are low precision. In order to solve the contradiction between high precision and high structure strength, a metal/silicon composite structure is proposed in this paper, and a hybrid fabrication process is introduced. This new method mainly consists of metal sputtering, electroplating, and (inductively-coupled-plasma) ICP etching. As the resolution of the thick dry film is limited, the process of a femtosecond laser is applied to refine the structure, and the Ni plate (a block of 1 mm × 3 mm × 0.3 mm with a cavity of ϕ 0.85 mm × 0.3 mm in the center) is fabricated on the silicon-on-insulator (SOI) wafer successfully. After the double sides are etched by ICP, the SOI wafer is immersed in a buffered-oxide-etch (BOE) etchant to remove the buried layer. The cover plate acts as the encapsulation and is bonded with the SOI wafer by the epoxy glue. Then, the temporary support beam of the device is broken by the probe, and the suspended composite structure can be fully released. The hybrid process is the integration of the silicon-based process and the metal-based process, which can combine the advantages of both high precision and a high structure strength. The process proposed here is suitable for the application of weapon miniaturization.

Single Mask Selective Release Process for Complex SOI MEMS Device

A Single Mask Dry Releasing Process for Making High Aspect Ratio Soimemsdevices.

A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices

Fabrication of SOI MEMS Inertial Sensors with Dry Releasing Process

A new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si3N4 embedded mask

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

A New Release Process in Surface Micromachining-Double Mask Technology

An SOI-based post-fabrication process for compliant MEMS devices

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

An SOI–MEMS Technology Using Substrate Layer and Bonded Glass As Wafer-Level Package

Study on Compatible Cmos-Mems Process with Surface Micromachining for the Application of Monolithic Integration

The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device.

Fabrication of Monolithic Integrated MEMS Resonator with Wet-Release-monitoring Array

Post-CMOS Processing for High-Aspect-Ratio

A New Release Process for Polysilicon Surface Micromachining Using Sacrificial Polysilicon Anchor and Photolithography after Sacrificial Etching

Single wafer fabrication of a symmetric double-sided beam-mass structure using DRIE and wet etching by a novel vertical sidewall protection technique

Three-dimensional integration of suspended single-crystalline silicon MEMS arrays with CMOS

Fabrication Challenges and Test Structures for High-Aspect-ratio SOI MEMS Devices with Refilled Electrical Isolation Trenches

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Removable Fast Package Technology For Mems Devices Using Polymer Connectors And Silicon Sockets