Abstract:Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm2 V-1 s-1 at room temperature.

Controllable Synthesis of Single-Crystal Monolayer Graphene on Copper Foils by Low-Pressure Chemical Vapor Deposition

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Synthesis of Graphene Together with Undesired Cuxo Nanodots on Copper Foils by Low-Pressure Chemical Vapor Deposition

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Synthesis of Single-Crystal Graphene on Copper Foils Using a Low-Nucleation-Density Region in a Quartz Boat

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Fabrication of single-crystal few-layer graphene domains on copper by modified low-pressure chemical vapor deposition

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface.

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Oxidation-assisted graphene heteroepitaxy on copper foil

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly.

Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect

Controllable synthesis of monolayer WSe 2 crystals by Copper-Assisted chemical vapor deposition