Abstract:A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm2V-1s-1 at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface.

Graphene: Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface (adv. Mater. 37/2014)

Controlled Growth of Single‐Crystal Graphene Films

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Controlled Growth of Single‐Crystal Graphene Wafers on Twin‐Boundary‐Free Cu(111) Substrates

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

Controlling Fundamental Fluctuations for Reproducible Growth of Large Single-Crystal Graphene

Graphene thickness control via gas-phase dynamics in chemical vapor deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure

Slip‐line‐guided Growth of Graphene

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition