Abstract:A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm2V-1s-1 at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Graphene: Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface (adv. Mater. 37/2014)

Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface.

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Slip‐line‐guided Growth of Graphene

Controlled Growth of Single‐Crystal Graphene Wafers on Twin‐Boundary‐Free Cu(111) Substrates

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Controlled Growth of Single‐Crystal Graphene Films

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy

Large‐Area Growth of Five‐Lobed and Triangular Graphene Grains on Textured Cu Substrate

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Graphene: Single and Polycrystalline Graphene on Rh(111) Following Different Growth Mechanisms (small 8/2013)

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Controlling Fundamental Fluctuations for Reproducible Growth of Large Single-Crystal Graphene