Abstract:A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm2V-1s-1 at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Large‐Area Growth of Five‐Lobed and Triangular Graphene Grains on Textured Cu Substrate

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Direct Top‐Down Fabrication of Large‐Area Graphene Arrays by an In Situ Etching Method

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Communication: Stable Carbon Nanoarches in the Initial Stages of Epitaxial Growth of Graphene on Cu(111)

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Graphene: Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface (adv. Mater. 37/2014)

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface.

Graphene Growth: Mechanisms of Graphene Growth on Metal Surfaces: Theoretical Perspectives (small 11/2014)

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Rapid Growth Of Large-Area Single-Crystal Graphene Film By Seamless Stitching Using Resolidified Copper Foil On A Molybdenum Substrate

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Growth and Atomic-Scale Characterizations of Graphene on Multifaceted Textured Pt Foils Prepared by Chemical Vapor Deposition

Substrate Engineering for CVD Growth of Single Crystal Graphene