A Single Fbar-Based Temperature and Pressure Sensors

X. L. He,L. Garcia-Gancedo,P. C. Jin,J. Zhou,A. J. Flewitt,W. I. Milne,J. K. Luo
DOI: https://doi.org/10.4028/www.scientific.net/kem.562-565.188
2013-01-01
Key Engineering Materials
Abstract:A novel temperature and pressure sensor based on a single film bulk acoustic resonator (FBAR) is designed. This FBAR support two resonant modes, which response opposite to the change of temperature. By sealed the back cavity of a back-trench membrane type FBAR with silicon wafer, an on-chip single FBAR sensor suitable for measuring temperature and pressure simultaneously is proposed. For unsealed device, the experimental results show that the first resonant mode has a temperature coefficient of frequency (TCF) of 69.5ppm/K, and the TCF of the second mode is -8.1ppm/K. After sealed the back trench, it can be used as a pressure sensor, the pressure coefficient of frequency (PCF) for the two resonant mode is -17.4ppm/kPa and -6.1 ppm/kPa respectively, both of them being more sensitive than other existing pressure sensors.
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