Abstract:Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum-classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti4O7 conductive filament. Carrier transport analysis of all multilevel switching I-V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti4O7 conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament.

Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Multilevel Resistive Switching With Ionic And Metallic Filaments

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Multilevel Resistive Switching in Ag/Sio2/Pt Resistive Switching Memory Device

Multilevel Resistive Switching Characteristics In Ag/Sio2/Pt Rram Devices

Multi-mode Resistive Switching Behaviors Induced by Modifying Ti Interlayer Thickness and Operation Scheme

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Computational Study on Filament Growth Dynamics in Microstructure-Controlled Storage Media of Resistive Switching Memories.

Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM

Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Complementary Switching in 3D Resistive Memory Array

Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices