Fabrication of Large Area Hexagonal Boron Nitride Thin Films for Bendable Capacitors

Ning Guo,Jinquan Wei,Yi Jia,Huanhuan Sun,Yuhang Wang,Kehan Zhao,Xiaolan Shi,Liuwan Zhang,Xinming Li,Anyuan Cao,Hongwei Zhu,Kunlin Wang,Dehai Wu
DOI: https://doi.org/10.1007/s12274-013-0336-4
IF: 9.9
2013-01-01
Nano Research
Abstract:Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ∼9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm 2 , which is one order of magnitude higher than the calculated value.
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