Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Yuan Huang,Fei Liu,Qiang Luo,Yuan Tian,Qiang Zou,Chen Li,Chengmin Shen,Shaozhi Deng,Changzhi Gu,Ningsheng Xu,Hongjun Gao
DOI: https://doi.org/10.1007/s12274-012-0273-7
IF: 9.9
2012-01-01
Nano Research
Abstract:Large-area patterned boron carbide nanowires (B 4 C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B 4 C NWs is about 50 nm, with a mean length of 20 μm. The B 4 C NWs have a single-crystal structure and conductivities around 5.1 × 10 −2 Ω −1 ·cm −1 . Field emission measurements of patterned B 4 C NWs films show that their turn-on electric field is 2.7 V/μm, lower than that of continuous B 4 C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B 4 C NWs are a promising candidate for flexible cold cathode materials.
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