Fabrication of laterally driven bulk titanium devices on titanium-on-glass wafers

Yiming Zhang,Nannan Li,Bo Yan,Xiaoyang Feng,Jia Hu,Shuwei He,Yilong Hao,Jing Chen
DOI: https://doi.org/10.1088/0960-1317/23/7/075026
2013-01-01
Journal of Micromechanics and Microengineering
Abstract:In this study, a sandwiched titanium-on-glass (TOG) substrate was used to fabricate laterally driven microelectromechanical systems devices with bulk titanium as the structural material. 4 " TOG wafers with a titanium device layer of 25 mu m were fabricated by low temperature SU-8 wafer bonding and chemical mechanical polishing. By using inductively coupled plasma for titanium deep etching as well as dry release, suspended high-aspect-ratio bulk titanium structures were realized with only one mask. A laterally driven electrostatic comb-driven bulk titanium resonator was manufactured as a preliminary demonstration. The resonator achieves a quality factor of 110 at 34 kHz, and survived 10 000 g shock without damage. Due to the high mechanical endurance and excellent corrosion resistance of titanium, TOG technology may open up many new applications in harsh environments.
What problem does this paper attempt to address?