Abstract:Abstract Titanium alloys have a high strength-to-weight ratio, fatigue performance and excellent corrosion resistance, and therefore are widely used in the aerospace sector due to their ability to withstand severe mechanical and thermal stresses in service. There are numerous cases where it would be desirable to use different titanium alloys in defined subcomponent regions to improve performance and efficiency. Conventional processing routes do not permit components to be produced with multiple titanium alloys and thus, design efficiency and optimization of component properties is compromised or over-engineered. In this study, a hybrid solid-state consolidation route is presented whereby field assisted sintering technology (FAST) is exploited to diffusion bond (DB) dissimilar titanium alloy powders in defined regions—a process termed FAST-DB. Titanium alloy powders Ti-6Al-4V (Ti-64) and Ti-6Al-2Sn-4Zr-2Mo (Ti-6242) were bonded using FAST in order to study the tensile deformation behavior and strain localization across a dissimilar alloy solid-state bond. FAST-DB was carried out at the sub- and super- beta transus temperatures of both alloys to generate dissimilar microstructure morphologies across the bond. In all cases, diffusion bonds showed excellent structural integrity with no defects and a smooth hardness profile across the bond. The deformation characteristics of the bonds was studied using two different tensile test approaches. The first approach used ASTM standard specimens to measure the mechanical properties of FAST-DB samples and study the location of the tensile failure. The second approach used a microtester and optical Digital Image Correlation to capture the grain interaction in the bond region under tensile loading. The work demonstrated that the diffusion bond remains intact and that tensile failure occurs in Ti-64 (i.e. the lower strength alloy) and is independent of the grain crystal orientation. The results from this study will provide materials engineers confidence in nesting FAST-DB technology in future near net shape manufacturing routes.

Single-Mask, Flip-Bonded Titanium-On-Glass (Fbtog) Technology For Wafer-Level Batch Fabrication Of Suspended High-Aspect-Ratio Bulk Titanium Microstructures

Fabrication of laterally driven bulk titanium devices on titanium-on-glass wafers

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Manufacture of high aspect ratio bulk titanium micro-parts by inductively coupled plasma etching

Fabrication of High Aspect-Ratio Microstructure on Improved Titanium Substrate with Excellent Adhesive Strength and SU-8 Photoresist

Deformation Behaviour of a FAST Diffusion Bond Processed from Dissimilar Titanium Alloy Powders

Plasma Activated Titanium-Based Bonding for Robust and Reliable Si-Si and Si-glass Integration

Transition-free indirect bonding towards 3D multi-layer glass stacking

Wafer level Tungsten-Glass bonding with photosensitive BCB

Bulk Titanium Deep Etching Based on ICP

Biocompatible PVTF Coatings on Ti with Improved Bonding Strength

Fabrication of ultra-deep high-aspect-ratio isolation trench without void and its application

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

Facile Fabrication of Multi-Scale Microgroove Textures on Ti-based Surface by Coupling the Re-Solidification Bulges Derived from Nanosecond Laser Irradiation

Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer

Stable bonding of W and ODS steel fabricated by TLP diffusion technology through inserting a novel composite interlayer Zr/Cu

High-Yield Triple-Stack Bonding Fabrication Process for Micromachined Micromotors with Contactless Rotor

Direct Bonding of High Dielectric Oxides for High-Performance Transistor Applications

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect