Abstract:TiO2 is widely available as a chemically stable and harmless material. Recently, it has received a great deal of attention as a practical thermoelectric material. In this work, we studied the effects of aluminum (Al) doping concentration and lattice parameter on the thermoelectric properties of TiO2 at both room and high temperatures (475 degrees C). We found that the Al doping leads to a compression in the lattice constant and an increase in carrier concentration and consequently increases the electrical conductivity in the TiO2. We observed that the Al-doped TiO2 thin film shows a negative Seebeck coefficient and its value linearly decreases with increasing electrical conductivity. This result indicates that the Seebeck effect is developed by entropy-driven thermally assisted charge diffusion between low- and high-temperature surfaces. Further studies found that doping-induced reduction on entropy difference through electrical conductivity is accountable for the decrease of the Seebeck effect in the Al-doped TiO2. However, the Al doping can lead to phonon scattering at grain boundary interfaces and consequently decreases thermal conductivity. Therefore, the Al doping can essentially function as a mechanism to separately adjust electrical and thermal conductivities in the Al-doped TiO2. With Al doping, we obtained a maximal figure of merit (Z value) to be 1.30 at 475 degrees C and 0.48 At 23 degrees C from the Al-doped TiO2 at the doping concentration of 3%. The comparison of Z values between room and high temperatures confirms that thermally assisted charge diffusion and phonon scattering are two critical parameters for the development of efficient thermoelectric function in the Al-doped TiO2.

Improvement of thermoelectric properties of CuAlo2 by excess oxygen doping in annealing

Improvement of Thermoelectric Properties of CuAlO<sub>2</sub> by Excess Oxygen Doping in Annealing

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221 Fabrication and Performance Improvement of CuAlO_2 Thermoelectrics by Orientation Process and Densification

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Study on Aluminium Oxide Doping Modification of Indium Oxide and Thermoelectric Properties

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Enhancing thermoelectric performance of TiO 2 via aluminum doping: Insights and applications

Doping Effects on Internally Coupled Seebeck Coefficient, Electrical, and Thermal Conductivities in Aluminum-Doped Tio2

Annealing effects on superconductivity of various oxygen-doped as-grown Bi2Sr2CaCu2O8+y crystals

Thermoelectric Power of Al Doped La–Sr–Cu–O System

Thermoelectric Properties and Electronic Structure of Al-Doped Zno

Improvement on dielectric properties of CaCu3Ti4O12 ceramics by heat treatment in rich oxygen atmosphere

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Improved High Temperature Thermoelectric Properties in Misfit Ca3Co4O9 by Thermal Annealing

Synthesis and characterization of Al doped non-stoichiometric ratio titanium oxide at high temperature and pressure

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Oxygen Order Control by Post-Annealing for Optimizing Critical Temperature of YBaCuO Coated Conductors with Silver Protective Layer