Abstract:In the present first-principles study, the optical and thermoelectric properties of metallic (cubic TiO, monoclinic TiO, and γ-Ti3O5) and semiconducting (Ti2O3, α-Ti3O5, β-Ti3O5, Ti4O7, and Ti5O9) phases of TinO2n-1 were investigated using different functionals, including mBJ, PBE, YS-PBE0, and PBE+U. The electronic and optical bandgap of the semiconducting phases obtained by YS-PBE0 and random phase approximation are in good agreement with the experimental data compared to PBE+U. Investigating the optical absorption spectrum reveals two main pronounced peaks for the semiconducting phases of TinO2n-1 using both YS-PBE0 and PBE+U. The first peak, located in the infrared region, can be attributed to interband (t2g-eg) transition, while the second peak, positioned in the ultraviolet region, originates from O-2p to Ti-3d intraband transition. The thermoelectric results show that the semiconducting phases obtain almost a high Seebeck coefficient (800-1200 μV/K) under small doping. The high Seebeck coefficient can be traced back to a rather large effective mass, especially for those which have flat bands near the Fermi level. To have a better description of the thermoelectric figure of merit, the lattice thermal conductivity was calculated in the range of ~ 0.17-2.41 W/(m.K) by a direct solution of the linearized phonon Boltzmann equations. Furthermore, the electronic relaxation time for metallic and semiconducting phases was obtained in the order of 10-15s and 10-16s, respectively, through fitting with the experimental data. Additionally, the phonon relaxation time for TinO2n-1 phases falls within the range of ~0.1-1 ps. Despite having a high Seebeck coefficient, the thermoelectric figure of merit seems to have a low value (less than 1) in the semiconducting phases of TinO2n-1. This can be due to weak electrical conductivity relative to the lattice thermal conductivity. However, the thermoelectric figure of merit can be enhanced via appropriate carrier concentration engineering in the semiconducting phases of TinO2n-1. Therefore, it is expected that titanium suboxides, which are both environmentally friendly and easy to fabricate, are potentially applicable in thermoelectric devices.

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