Enhancing thermoelectric performance of TiO 2 via aluminum doping: Insights and applications

Shoug Mohammad Alghamdi,Hind Albalawi,Syed Asfar Ahmad Jafri,Arslan Ashfaq,Hind Alqurashi,Elsammani Ali Shokralla,Obaidallah A. Algethami,O.A. Albeydani,Emaan Alsubhe,M. Musa Saad H.-E.
DOI: https://doi.org/10.1016/j.vacuum.2024.113013
IF: 4
2024-02-02
Vacuum
Abstract:Titanium dioxide (TiO 2 ) is a chemically inert and non-toxic material that is easily accessible. Recently, it has garnered significant interest for its potential as a viable thermoelectric material. In our study, we examined the influence of varying aluminium (Al) doping concentrations on the thermoelectric performance of TiO 2 at ambient temperature. Our findings revealed that Al content led to a compression of the lattice parameters, a mixed phase of anatase and rutile, an increase in charge carrier density, and an enhancement in the electrical conductivity of TiO 2 . We have observed that the Al-doped TiO 2 film exhibited a negative value Seebeck coefficient, with its value linearly decreasing as the electrical conductivity increased. This outcome suggests that the Seebeck effect arises from entropy-driven thermally supported charge diffusion between surfaces at different temperatures. Further research revealed the reduction in entropy difference due to increased electrical conductivity and reduced Seebeck coefficient in the Al-doped sample. Additionally, Al adding caused phonon scattering at grain boundary interfaces. However, Al doping effectively tunes electrical conductivity in Al-doped TiO 2 independently. We have achieved the maximum thermoelectric power factor of 3.3 μW m −1 K −2 with 3 % Al doping at 425 K.
materials science, multidisciplinary,physics, applied
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