Abstract:The postdeposition microwave heating treatment is carried out on the n-type crystalline silicon with bifacial deposited intrinsic hydrogenated amorphous silicon layers (i/c-Si/i) used as a precursor for amorphous silicon/crystalline silicon heterojunction (SHJ) solar cells. The passivation of i/c-Si/i heterostructure was improved significantly in 5 s microwave processing and two cycles of this processing later it could be stabilized. The results of FTIR show that the hydrogen within (i)a-Si:H layer is released rapidly during the process and the microstructure factor R* continues to decrease versus the processing time. An appropriate amount of hydrogen atoms released from Si–H bonds (especially weak bonds) move to the interface to saturate the dangling bonds favoring the passivation performance but excessive hydrogen release from the layers could lead to extremely poor passivation. The SHJ solar cell with a microwave-treated precursor of i/c-Si/i achieved an improved efficiency of 1.6% abs corresponding to the reference cell and improved surface passivation quality is the main reason for the efficiency gain, while the efficiency of the cells with the other two microwave-treated precursors of i/c-Si/i/p and n/i/c-Si/i/p increased by 1.1% abs and decreased by 0.7% abs , respectively, which may due to the difference in temperature rise during the processing. In addition, the cell with the microwave-treated precursor of i/c-Si/i shows a greater degradation of about 0.4% abs after storage in the N 2 atmosphere for 312 h, while the cells with the other two precursors show good stability. It indicates that weak bonds formed by dopant atoms with hydrogen may be broken and released during the process, which may play an important facilitator role in the mechanism of degradation after the SHJ solar cells are fabricated.

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Microwave-crystallization of Amorphous Silicon Film Using Carbon-Overcoat As Susceptor

Effect of microwave annealing on amorphous Si of carbon powder

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Crystallization of Amorphous Si Film by Microwave Annealing with SiC Susceptors

Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Structure and Electronic States in A-Si:H Thin Films

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Microwave Crystallization of Silicon Film Using Graphite Susceptor

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

A study on the improvement of amorphous silicon/crystalline silicon heterojunction solar cells by microwave processing

Enhancement of Thermal Conductivity of Hydrogenated Silicon Film by Microcrystalline Structure Growth

Analysis of the microstructure of laser crystallized hydrogenated amorphous silicon films by spectroscopic ellipsometry

The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film