Abstract:Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industrial applications, Si MOSFETs have been replaced by SiC MOSFETs. However, as the switching speed increases exponentially, some problems are amplified, the most serious of which is the overshoot of current and voltage. The increase in voltage and current slope caused by high switching speeds inevitably leads to overshoot, oscillations, and additional losses in the circuit. This paper focusses on the actual performance of the optimised switching strategy (OSS) in circuit testing and combines the existing simulation results to verify the practicability of OSS. In this paper, the optimised switching strategy is introduced first, and then, the LTspice model of SiC MOSFET is established in detail and verifies the feasibility of the OSS through half-bridge circuit simulation. Finally, the test platform is built using a programmable gate drive module (2ASC-12A1HP). Through a 400 V/30 A double-pulse test, the practicality of the OSS is verified. The experiments show that the OSS can greatly improve the switching performance of SiC MOSFETs.

A 3600 V/80 a single external-driver series connected circuit with three Silicon Carbide MOSFETs

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies

A 10kV/200A SiC MOSFET module with series-parallel hybrid connection

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

High Power Three-Level Rectifier Comprising SiC MOSFET & Si Diode Hybrid Power Stage

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comparative Study on Reliability and Application Features of SiC MOSFET

Analysis and Flexible DV/DT Control of an Active Clamping Topology for Series-Connected SiC MOSFETs

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

Series SiC MOSFETs with Single Gate Driver Based on Capacitance Coupling and Passive Snubber Circuits

A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

A Novel Direct Gate Driver For Series-Connected Sic Mosfets

An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

Hybrid Dynamic Voltage Balancing Technique for Series-Connected SiC MOSFETs