Multiferroic and Resistive Switching Behaviors in BiFe0.95Cr0.05O3 Thin Films Deposited on Pt/Ti/SiO2/Si Substrates

B. C. Luo,J. Wang,X. S. Cao,K. X. Jin,C. L. Chen
DOI: https://doi.org/10.1007/s00339-013-7592-8
2013-01-01
Abstract:Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.
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