Outstanding Ferroelectric Properties in the Narrow Bandgap Cobalt- Substituted BiFeO 3 Spin-Coated Films
Jing Zhang,Jian-Qing Dai,Guang-Cheng Zhang,Xin-Jian Zhu
DOI: https://doi.org/10.1007/s10971-024-06443-4
2024-01-01
Journal of Sol-Gel Science and Technology
Abstract:Thin films of BiFe1−xCoxO3 (BFCO, x = 0–0.05) were prepared using the sol–gel method and deposited on a fluorine-doped tin oxide (FTO)/glass substrate. The crystal structure, surface morphology, dielectric properties, polarization, and optical characteristics of the BFCO thin films were investigated. X-ray diffraction (XRD) and Raman spectroscopy analyses show that Co doping induces lattice distortion. Scanning electron microscopy (SEM) images demonstrate that BFCO films with x = 0.03 possess uniform fine grains, which are crucial for their ferroelectric properties. From XPS pattern, it can be observed that Co doping can inhibit the conversion of Fe3+ into Fe2+, and BiFe0.97Co0.03O3 films exhibit greatly reduced oxygen vacancy concentration. Therefore, BiFe0.97Co0.03O3 film was found to have the lowest leakage current density (J = 7.18 × 10−7 A/cm2). The film demonstrates outstanding residual polarization at room temperature, with a value of Pr = 152.1 μC/cm2, more than twice the magnitude of that in pure BFO (Pr = 72.33 μC/cm2). Moreover, the dielectric properties of BFCO films show a significant improvement when compared to those of pure BFO samples. This enhancement is attributed to the Co doping-induced structural transition, along with a reduction in grain size and a decrease in the concentration of oxygen vacancies. Additionally, the BiFe0.97Co0.03O3 film exhibits a narrower band gap (Eg = 1.69 eV) in comparison to the BFO film (Eg = 1.87 eV). Consequently, an expansion in the range of photovoltaic applications for BFO films can be achieved.