Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Indirect to Direct Band Gap Transition in Ultra-Thin Silicon Films.

Exploring Direct to Indirect Bandgap Transition in Silicon Nanowires: Size Effect

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Interfacial protection of topological surface states in ultrathin Sb films.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Unified theory of the direct or indirect bandgap nature of conventional semiconductors

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Computational Design of Silicon-Based Direct-Band Gap Nanostructure: Silicon Nanonet

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Dipole-Allowed Direct Band Gap Silicon Superlattices

Strain-induced energy band gap opening in two-dimensional bilayered silicon film

Electronic and Topological Transitions in Sb (111) Thin Films

Experimental Realization of Semiconducting Monolayer Si2Te2 Films

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

Electronic structures of multilayer two-dimensional silicon carbide with oriented misalignment

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Two-dimensional SiP: an unexplored direct band-gap semiconductor

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2