Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Computational Design of Silicon-Based Direct-Band Gap Nanostructure: Silicon Nanonet

First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon Nanonets

Design and analysis of one-dimensional nanostructure on amorphous silicon solar cell for surface reflectance reduction

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Exploring Direct to Indirect Bandgap Transition in Silicon Nanowires: Size Effect

Stable Porous Crystalline Silicon with Nanotubular Structure: A Predicted Allotrope with Direct Band Gap

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Electronic State and Momentum Matrix of H-passivated Silicon Nanonets: A First-Principles Calculation

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Design Of Novel Silicon Nanostructures

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Advancing in Research of One-dimensional Silicon Nano-materials

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Dipole-Allowed Direct Band Gap Silicon Superlattices

Indirect to Direct Band Gap Transition in Ultra-Thin Silicon Films.

Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon h 10 -Si

The Role of Surface Terminations on the Band Structure and Optical Properties of Silicon Nanonets

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization