Abstract:Atmospheric-pressure (AP) plasma sources have attracted researchers in many engineering fields, due to its low cost and easy handling. The AP plasma technique has been successfully applied on the surface figuring and texturing of Si, fused silica, RS-SiC, and SiC, etc. However, these studies focus more on better control for surface figuring of the substrate. The understanding of how the Si surface roughening or smoothing is occurred during the AP plasma etching using He-based CF4 mixture gas has seldom been reported. The present study starts from a parametric study of O2 addition concentration to He-based CF4 plasma. A groove is initially etched on a single-crystal silicon wafer by the CCP-type parallel-plate plasma etcher, to study the etching rate, surface morphology, material removal characteristics, and surface roughness evolution after the plasma etched removal. It is revealed that the material removal with a typical profile is achieved without introducing further damage. At the same time, the surface finish and surface integrity were enhanced by the AP plasma. The underlying mechanism of the process was investigated. Additionally, the optimized gas composition is then applied to the larger area etching by the computer-controlled scanning with different feed rates. Based on the experimental results, the surface evolution during the plasma etching process is revealed in detail. The surface removal profile also demonstrates that this method can provide an alternative way to achieve damage-free material removal for a larger area substrate by the duplicating of the typical removal profile with different etching path.

SF6 plasma etching and profile evolution of silicon in microplasma reactor

Design and Experiments of Microplasma Reactor for Scanning Plasma Etching

A New Microplasma Reactor for Scanning Plasma Etching

Characterization of inverted pyramidal hollow cathode microplasma devices operating in reactive gases for maskless scanning plasma etching

Fabrication and Performance of Microplasma Reactor for Maskless Scanning Plasma Etching

Design and fabrication of microcantilever probe integrated with microplasma reactor for maskless scanning plasma etching

Diagnostic of Microplasma Reactor for Scanning Plasma Etching

Etching Mechanism of Microplasma Reactor for Scanning Plasma Etching

Fabrication and Performance Optimization of the Microplasma Reactor with Composite Dielectrics

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Design and fabrication of the microplasma reactor for maskless scanning plasma etching

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Simultaneous Diagnostics of Electron Density and Temperature in Micoplasma Reactor for Scanning Plasma Etching

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Electrical and Optical Testing System for Microplasma in Scanning Plasma Etching

Fabrication of a novel microcantilever probe with inverted pyramidal microdischarge for maskless scanning plasma etching

Research of Extraction Mechanism for Microplasma Reactor

Fabrication of Nano-Aperture Hollow Tip Array for Microplasma Etching

Design and Fabrication of Microcantilever Probes Used for Microplasma Maskless Etching

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals