Abstract:Fin field effect transistor (FinFET) is a most widely used structure when the field effect transistor is scaled down to 30 nm or less. And there are few studies on single-event transient of FinFET devices with gate length below 30 nm. The single-event-transient on FinFET with gate length below 30 nm is worth studying. The single-event-transient responses of bulk FinFETs with 30 nm, 40 nm, 60 nm and 100 nm gate length are examined by using the pulsed laser and technology computer-aided design (TCAD) simulation in this article. First, we use the pulsed laser to ionize the gate of the FinFET device and detect the transient drain current of the FinFET device. The experimental results show that there are obvious platforms for the transient drain current tails of FinFETs with different gate lengths, and the platform current increases as the gate length of FinFET becomes shorter. The charges collected in the platform of FinFET devices with gate lengths of 100, 60, 40, and 30 nm are 34%, 40%, 51%, and 65% of the total charge collected in transient drain current, respectively. Therefore, when the FinFET device with the gate length below 100 nm, the platform current will seriously affect the device performance. Second, we use TCAD to simulate the heavy ion single-event effect of FinFET device and study the generation mechanism of platform region in transient drain current. The TCAD simulation explains this mechanism. Laser or heavy ions ionize high concentration electron-hole pairs in the device. The holes are quickly collected and the high concentration electrons are left under the FinFET channel. High concentration electrons conduct source and drain, generating the source-to-drain current at the tail of the transient drain current. Moreover the source-drain conduction enhances the electrostatic potential below the FinFET channel and suppresses high-concentration electron diffusion, making source-to-drain current decrease slowly and form the platform. The transient drain current tail has a long duration and a large quantity of collected charges, which seriously affects FinFET performance. This is a problem that needs studying in the single-event effect of FinFET device. It is also a problem difficult to solve when the FinFET devices are applied to spacecraft. And the generation mechanism of the transient drain current plateau region of FinFET device can provide theoretical guidance for solving these problems.

Two-dimensional Numerical Analysis of the Collection Mechanism of Single Event Transient Current in NMOSFET

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

3D Numerical Simulations of Single-Event Transient Effects in SOI FinFETs

Collection of Charge in NMOS from Single Event Effect.

Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Effect of Source-Drain Conduction in Single-Event Transient on Nanoscaled Bulk Fin Field Effect Transistor

Two-Dimensional Quantum Simulation of Gate Leakage Current in Nanoscale Double Gate MOSFETs

Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation

LET-dependent model of single-event effects in MOSFETs

Simulation Study on Single-Event Burnout Effect in SiC DT-MOSFET

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

Modeling and simulation of single-event effect in CMOS circuit

An efficient model algorithm for two-dimensional field-effect transistors

A Deep Sub-Micrometer Nmosfet Non-Local Transport Model for Esd Effect

Study on Two-Dimensional Analytical Models for Symmetrical Gate Stack Dual Gate Strained Silicon Mosfets