Abstract:Silicon carbide (SiC), as a wide-band gap semiconductor, plays an important role in high temperature and high-power devices, and the spin defect has great application prospect in quantum technology. Divacancy in SiC (VCVSi, VV) has attracted more and more attention. There are a lot of experimental studies on color center preparation by ion implantation, but the mechanism of atomic scale defects in the experimental preparation process is not fully understood. EPI epitaxial 4H–SiC was implanted with 250 keV proton at room temperature under three fluence of 1E14 cm−2, 1E15 cm−2, 1E16 cm−2. Defects of implanted 4H–SiC samples were characterized by photoluminescence spectrum and electron paramagnetic resonance (EPR). The existence of the optimal implantation fluence for VSi and VCVSi (VV) color centers by hydrogen ion implantation was found. Molecular dynamics (MD) simulation by considering the ionization energy loss for swift ion implantation were used to study the defect distribution and transformation at atomic-scale during hydrogen ion implantation and post-annealing. The optimal implantation fluence was found and confirmed by comparing the atomic-scale implantation simulation with the experimental results. In the annealing simulation, the optimal annealing temperature for the color centers in 4H–SiC was verified, and its formation mechanism was analyzed by accurately calculating the defect transformation during the annealing process. Finally, in order to accurately control the depth of color center in 4H–SiC, dual ions implantation of carbon and proton has been studied to realize the optimal divacancy yield by SRIM and MD simulations. Molecular dynamics simulation results showed that low-fluence C pre-implantation is helpful to improve the color center yield for the dual ions implantation.

Defect induced ferromagnetism in 4H-SiC single crystals

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Atomic-scale revealing defects in ion irradiated 4H-SiC

Rise and fall of defect induced ferromagnetism in SiC single crystals

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Optical Characterization of Ion-Implanted 4H-SiC

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Ionization-induced annealing of pre-existing defects in silicon carbide

Defects Mediated Ferromagnetism in a V-doped 6H-Sic Single Crystal

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Al-implantation induced damage in 4H-SiC

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Room-temperature coherent control of implanted defect spins in silicon carbide

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

On the experimental properties of the TS defect in 4H-SiC

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature