Abstract:The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is essential to predict the practical damages. In this work, we first make a brief review on the state of the art, critically emphasizing on the difficulty encountered in previous models to understand the dose rate dependence of the ISEs. We then introduce in detail our models explaining this basic phenomenon, which can be described as follows. Firstly, we show our experimental works on PNP and NPN transistors. A variable neutron fluence and $\gamma$-ray dose setup is adopted. Fluence-dependent `tick'-like and sublinear dose profiles are observed for PNP and NPN transistors, respectively. Secondly, we describe our theoretical investigations on the positive ISE in NPN transistors. We propose an atomistic model of transformation and annihilation of $\rm V_2$ displacement defects in p-type silicon under ionization irradiation, which is totally different from the traditional picture of Coulomb interaction of oxide trapped charges in silica on charge carriers in irradiated silicon. The predicted novel dose and fluence dependences are fully verified by the experimental data. Thirdly, the mechanism of the observed negative ISE in PNP transistors is investigated in a similar way as in the NPN transistor case. The difference is that in n-type silicon, VO displacement defects also undergo an ionization-induced transformation and annihilation process. Our results show that, the evolution of displacement defects due to carrier-enhanced defect diffusion and reaction is the dominating mechanism of the ISEs.

The equivalence of displacement damage in silicon bipolar junction transistors

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Displacement Damage Equivalence for Proton in InGaAsP Device

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

The reliability of SiGe HBT under swift heavy ion irradiation

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions

Statistical Analysis on the Effects of Heavy Ion Irradiation on 65 Nm Bulk Silicon MOS Devices

Study of irradiation damage in silicon at different scales

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Impact of the Displacement Damage in Channel and Source/Drain Regions on the Dc Characteristics Degradation in Deep-Submicron Mosfets after Heavy Ion Irradiation

The mechanism of the irradiation synergistic effect of Silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations

Irradiation Effects on DC Current Gain of SiGe HBT

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors