Abstract:Understanding the nature of metal/1D-semiconductor contacts such as metal/carbon nanotubes is a fundamental scientific and technological challenge for realizing high performance transistors\cite{Francois,Franklin}. A Schottky Barrier(SB) is usually formed at the interface of the $2D$ metal electrode with the $1D$ semiconducting carbon nanotube. As yet, experimental\cite{Appenzeller,Chen, Heinze, Derycke} and numerical \cite{Leonard, Jimenez} studies have generally failed\cite{Svensson} to come up with any functional relationship among the relevant variables affecting carrier transport across the SB owing to their unique geometries and complicated electrostatics. Here, we show that localized states called the metal induced gap states (MIGS)\cite{Tersoff,Leonard} already present in the barrier determines the transistor drain characteristics. These states seem to have little or no influence near the ON-state of the transistor but starts to affect the drain characteristics strongly as the OFF-state is approached. The role of MIGS is characterized by tracking the dynamics of the onset bias, $V_o$ of non-linear conduction in the drain characteristics with gate voltage $V_g$. We find that $V_o$ varies with the zero-bias conductance $G_o(V_g)$ for a gate bias $V_g$ as a power-law: $V_o$ $\sim $ ${G_o(V_g)}^x$ with an exponent $x$. The origin of this power-law relationship is tentatively suggested as a result of power-law variation of effective barrier height with $V_g$, corroborated by previous theoretical and experimental results\cite{Appenzeller}. The influence of MIGS states on transport is further verified independently by temperature dependent measurements. The unexpected scaling behavior seem to be very generic for metal/CNT contact providing an experimental forecast for designing state of the art CNT devices.

Impacts of Image Force on the Schottky Barrier Height at Metal-Carbon Nanotube Contacts

Schottky Barrier Formation at Metal Electrodes and Semiconducting Carbon Nanotubes

Schottky Barrier Formation at A Carbon Nanotube-Metal Junction

Chemical Bonding And Schottky Barrier For Metal-Carbon Nanotube Contacts

Ab Initio Study Of Schottky Barriers At Metal-Nanotube Contacts

Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.

Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Comprehensive Insights into Effect of Van Der Waals Contact on Carbon Nanotube Network Field-Effect Transistors

Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers.

The Influence of Contact Metal in Carbon Nanotube Transistor

Investigation of Schottky–Barrier Carbon Nanotube Field-Effect Transistor by an Efficient Semi-Classical Numerical Modeling

Image-Force Barrier Lowering of Schottky Barriers in Two-Dimensional Materials as a Function of Metal Contact Angle

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Schottky Barrier Heights at the Interfaces Between Pure-Phase Inas Nanowires and Metal Contacts

Schottky barriers in carbon nanotube heterojunctions

Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes

Gap states controlled transmission through 1D Metal-Nanotube junction

Schottky Barrier and Contact Resistance of InSb Nanowire Field Effect Transistors

Investigation on Nanotube-Metal Contacts under Different Contact Types