Abstract:This study focused on the numerical simulation of the distribution of residual stress in yttria-stabilized zirconia (YSZ) coatings prepared with atmospheric plasma spraying (APS). We particularly investigated the stress distribution around the interface between the top coat and bond coat. During thermal spray deposition, droplets and particles deposit on the substrate in a complex manner, causing interface waviness and non-uniform stress distribution. Therefore, residual stress is an important consideration when preparing thermal barrier coatings (TBCs). Residual stresses directly affect the performance of bond coats (BCs) and ceramic top coats (TCs). To accurately evaluate residual stress, we considered interface waviness and the thickness of the ceramic top coat and conducted a detailed analysis of stress distribution. The results show that compressive stress exists at the TC/BC interface, which may be caused by the mismatch in the thermal expansion coefficient between the YSZ top coat and the substrate, potentially leading to coating delamination. Moreover, the residual stress at the TC/BC interface significantly increases with an increasing YSZ thickness. When the top-coat thickness exceeds 300 μm, stress concentration and failure of the coating are likely to occur. Meanwhile, the optimized thermal spray experiment results confirm that the residual stress at the BC/YSZ interface of the thermal barrier coating is tensile stress, with a maximum value of 155 MPa, which is consistent with the finite element calculation results. Furthermore, the failure modes of TBCs with rough interface conditions are discussed in detail. Our research provides important guidance for TBC design and optimizing their performance.

The Effect of Different TSV Electroplating Levelers on the Copper Residual Stress

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Influence of Electroplating Current Density on Through Silicon Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Study of internal stress on electroplating copper used in through silicon via filling

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Structural influence of nitrogen-containing groups on triphenylmethane-based levelers in super-conformal copper electroplating

Structural Influence of Terminal Functional Groups on TEG-Based Leveler in Microvia Filling

Computational analysis and experimental evidence of two typical levelers for acid copper electroplating

Quasi In Situ Study on the Slipping Behavior and Residual Stress of Copper Strip

Effects of Film Thickness on the Residual Stress of Vanadium Dioxide Thin Films Grown by Magnetron Sputtering

Leveling and Microstructural Effects of Additives for Copper Electrodeposition

Tetrazole Derived Levelers for Filling Electroplated Cu Microvias: Electrochemical Behaviors and Quantum Calculations

Material characterization in TSV fabricated by supercritical carbon dioxide electroplating

Microstructure and Residual Stress Gradient Evolution Mechanism of Electronic Copper Strip for Lead Frame

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Effect of Top-Coat Thickness and Interface Fluctuation on the Residual Stress in APS-TBCs

Effect of As-Deposited Residual Stress on Transition Temperature of VO2 Films

The Influences of Grain Size Distributions on Thermal-Stresses in Cu-TSV

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Prediction and Effect Verification of Thiamine as a Leveling Agent in Chip Wafer Electroplating