Abstract:We carry out both the tight-binding model and the $ab\ initio$ to study the layered silicene, the spin, valley, sublattice degrees of freedom are taken into consider and the effects of electric field, magnetic field, and even the light in finite frequency together with its interesting optical propertice, which are all closely related to the spin-orbit coupling and Rashba coupling and lead to the tunable phase transitions (between the nontrivial topological phase which has nonzero Chern number or nonzero spin Chern number and the trivial phase). An exotic quantum anomalous Hall insulator phase are found which has nonzero spin Chern number and nonzero valley Chern number and as a giant-application-potential spintronic and valleytronics in the two-ternimate devices based on the monolayer silicene for the information transmission. In fact, the gap-out action can be understanded by analyse the Dirac mass as well as the Zeeman splitting or the external-field-induced symmetry-broken, and the changes of gap has a general nonmonotone-variation characteristic under both the effects of electron filed-induced Rashba-coupling $R_{2}(E_{\perp})$ and the electron field-induced band gap, and the band inversion related to the spin-orbit coupling which absorbs both the spin and orbital angular of momentum may happen during this process. The quantized Hall/longitudinal conductivity together with the optical conductivity are also explored, we see that even in the quantum spin Hall phase without any magnetic field, the two-terminate conductivity can be reduced to the value $e^{2}/h$ by controlling the helical edge model, and it can be further reduced to $e^{2}/2h$ by applying the magnetic field which similar to the graphene.

Magnetic and Electronic Properties of Silicane with Hydrogen Vacancies on the Surface

Electronic and Magnetic Properties of Graphene, Silicene and Germanene with Varying Vacancy Concentration

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Vacancy Dependent Structural, Electronic, and Magnetic Properties of Zigzag Silicene Nanoribbons:Co

Induce Magnetism into Silicene by Embedding Transition-Metal Atoms

Influence of strain and electric field on the properties of silicane

Silicane Nanoribbons: Electronic Structure and Electric Field Modulation

Substrate-induced half-metallic property in epitaxial silicene

Topological phase transition and electrically tunable diamagnetism in silicene

Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene

Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: an ab initio study

Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

Vacancy Induced Magnetism in N-doped 4h–sic by First-Principle Calculations

Integer quantum Hall conductivity and longitudinal conductivity in silicene under the electric field and magnetic field

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Structural, Magnetic and Topological Properties in Rare-Earth-adsorbed Silicene System

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Effect of Vacancy Defects and Hydrogen, Oxygen and Nitrogen Atomic Occupation on the Mechanical and Electronic Properties of C40-type VSi2