Abstract:Silicene, a silicon analogue of graphene, has attracted increasing attention during the past few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of graphite had already been theoretically explored. But there were very few studies on silicene until 2009, when silicene with a low buckled structure was confirmed to be dynamically stable by ab initio calculations. In spite of the low buckled geometry, silicene shares most of the outstanding electronic properties of planar graphene (e.g., the "Dirac cone", high Fermi velocity and carrier mobility). Compared with graphene, silicene has several prominent advantages: (1) a much stronger spin-orbit coupling, which may lead to a realization of quantum spin Hall effect in the experimentally accessible temperature, (2) a better tunability of the band gap, which is necessary for an effective field effect transistor (FET) operating at room temperature, (3) an easier valley polarization and more suitability for valleytronics study. From 2012, monolayer silicene sheets of different superstructures were successfully synthesized on various substrates, including Ag(111), Ir(1 1 I), ZrB2(0001), ZrC(111) and MoS2 surfaces. Multilayer silicene sheets have also been grown on Ag(1 1 1) surface. The experimental successes have stimulated many efforts to explore the intrinsic properties as well as potential device applications of silicene, including quantum spin Hall effect, quantum anomalous Hall effect, quantum valley Hall effect, superconductivity, band engineering, magnetism, thermoelectric effect, gas sensor, tunneling FET, spin filter, and spin FET, etc. Recently, a silicene FET has been fabricated, which shows the expected ambipolar Dirac charge transport and paves the way towards silicene-based nanoelectronics. This comprehensive review covers all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations. (C) 2016 Elsevier Ltd. All rights reserved.

Structural, Magnetic and Topological Properties in Rare-Earth-adsorbed Silicene System

Abundant Topological States in Silicene with Transition Metal Adatoms

Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene

Topological phase transition and electrically tunable diamagnetism in silicene

Local Reconstructions of Silicene Induced by Adatoms

Emerging various electronic and magnetic properties of silicene by light rare-earth metal substituted doping

Phase Diagrams and Topological Mixed Edge States in Silicene with Intrinsic and Extrinsic Rashba Effects

Structural Understanding of Self-Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

In-gap Localized States Induced by Adsorbates on Silicene

Adsorption of Alkali, Alkaline Earth and Transition Metal Atoms on Silicene

Giant Magnetoresistance in Silicene Nanoribbons

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Peculiar optical properties of bilayer silicene under the influence of external electric and magnetic fields

The electronic structure of rare-earth iron silicide R2Fe3Si5 superconductors

Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet

Chemical Functionalization of Silicene: Spontaneous Structural Transition and Exotic Electronic Properties.

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Rise of Silicene: A Competitive 2d Material

Substrate-induced half-metallic property in epitaxial silicene