Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene

Substrate-induced half-metallic property in epitaxial silicene

Electronic and Magnetic Properties of Graphene, Silicene and Germanene with Varying Vacancy Concentration

Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: an ab initio study

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

Defect effects on the electronic, valley, and magnetic properties of two-dimensional ferrovalley material VSi2N4

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Effect of Structural Vacancies on Lattice Vibration, Mechanical, Electronic, and Thermodynamic Properties of Cr5BSi3

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Magnetic and Electronic Properties of Silicane with Hydrogen Vacancies on the Surface

An effect of structural vacancies on the lattice vibration, mechanical, electronic and thermodynamic properties of Cr5BSi3

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Computational analysis of electronic structure and optical properties of monocrystalline silicon-vacancy defect system based on density functional theory

The Mechanism of Elastic and Electronic Properties of Tungsten Silicide (5/3) with Vacancy Defect from the First-Principles Calculations

Magnetic and transport properties of two-dimensional ferromagnet VSe 2 with Se vacancies

Vacancy Dependent Structural, Electronic, and Magnetic Properties of Zigzag Silicene Nanoribbons:Co

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

First-principles study of the structural and electronic properties of armchair silicene nanoribbons with vacancies

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Electron Delocalization in Gate-Tunable Gapless Silicene