Room-Temperature Ferromagnetism in N+-Implanted Zno:Mn Thin Films

H. B. Ruan,L. Fang,G. P. Qin,T. Y. Yang,W. J. Li,F. Wu,M. Saleem,C. Y. Kong

DOI: https://doi.org/10.1016/j.ssc.2012.04.059

IF: 1.934

2012-01-01

Solid State Communications

Abstract:Mn–N co-doped ZnO films with wurtzite structure were fabricated by RF magnetron sputtering together with the ion-implantation technique. Then a post-annealing at 650°C for 10min in a N2 atmosphere was performed to activate the implanted N+ ions and recover the crystal quality, and a p-type ZnO:Mn–N film with a hole concentration of about 2.1×1016cm−3 was obtained. It is found that the Mn mono-doped ZnO film only exhibits paramagnetic behavior, while after N+-implantation, it shows ferromagnetism at 300K, and the magnetization of the ZnO:Mn–N films can be further enhanced by thermal annealing due to the activation of the N acceptors. Our experimental results confirm that the codoping N acceptors are favorable for ferromagnetic ordering of Mn2+ ions in ZnO, which is consistent with the recent theoretical calculations.