Abstract:Bi2Te3 films always exhibit n-type transport characteristics even under the Bi-rich condition, which, however, was not clarified clearly. Herein, by virtue of advanced techniques such as scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy, we are able to identify the structural evolution on the atomic scale for Bi-rich Bi2Te3 films. The excess of Bi content will lead to the formation of p-type BiTe antisite defects; however, there is a doping limit for the excess of Bi to form BiTe antisites. Beyond this limit, the excess of Bi will form the n-type Bi2 planar defects in the van der Waals gap, the excellent electron donors, which can enhance the electron density by over one order of magnitude and up to the 1021 cm−3 range for Bi-rich Bi2Te3 films. Benefiting from the remarkable increase in the electron density and the suppression of carrier intrinsic excitations, Bi2Te3 films with Bi2 planar defects possess a much improved thermoelectric power factor, with a maximum value of 1.4 mW m−1 K−2 at 450 K, showing about 130% enhancement compared to that of the film without Bi2 intercalations. The discovery opens a new avenue to improve the thermoelectric properties of Bi2Te3 films utilizing the Bi2 planar defects.

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Preferential growth transformation of Bi0.5Sb 1.5Te3 films induced by facile post-annealing process: Enhanced thermoelectric performance with layered structure

The effect of (00l) crystal plane orientation on the thermoelectric properties of Bi2Te3 thin film

Interfacial‐Modulated Growth of Nanostructured Bi2Te3 Films for Enhancing Thermoelectric Performance

Multilayered Structure and Enhanced Thermoelectric Properties of Bi1.5sb0.5te3 Film with Preferential Growth

Limited Grain Growth in Multilayered Bi/Te Thin Films and the Influence on the Thermal and Electrical Conductivity

Bi2te3 Nanoplates' Selective Growth Morphology On Different Interfaces For Enhancing Thermoelectric Properties

Enhanced Thermoelectric Properties and Superlattice Structure of a Bi2Te3/ZrB2 Film Prepared by Ion-Beam-Assisted Deposition

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Enhanced Thermoelectric Properties and Layered Structure of Sb2Te3 Films Induced by Special (0 0 L) Crystal Plane

Oriented Growth of A2Te3 (A = Sb, Bi) Films and Their Devices with Enhanced Thermoelectric Performance

Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

Structural Control for High Performance Bi2Te3–xSex Thermoelectric Thin Films

Evolution of atomic structure and electronic transport properties in n-type Bi 2 Te 3 films via Bi 2 planar defects

Enhanced electrical and mechanical properties of Bi2Te3-based thermoelectric thick films enabled by a practical dynamic regulation strategy

Controlling the shape of hexagonal structure by growth condition improves the thermoelectric properties of p-type Bi-Te films

Electrodeposition and thermoelectric characterization of (00L)-oriented Bi2Te3 thin films on silicon with seed layer

Effects of Post-Annealing on Crystalline and Transport Properties of Bi2Te3 Thin Films*

Order-Induced Improvement of Thermoelectric Properties in (Bi 0.2 Sb 0.8 ) 2 Te 3 Column Arrays

Ordered Structure and High Thermoelectric Properties of Bi2(Te,Se)3 Nanowire Array

Self-formation of Thickness Tunable Bi2Te3 Nanoplates on Thin Films with Enhanced Thermoelectric Performance