Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

Zhichong Wang,Xiangpeng Zhang,Zhigang Zeng,Ziqiang Zhang,Zhiyu Hu
DOI: https://doi.org/10.1149/2.0041408ssl
2014-01-01
ECS Solid State Letters
Abstract:Bi2Te3 thin film composed of single-crystal nanoplates was fabricated on Si substrate by a modified two-step molecular beam epitaxy (MBE) method. The possible growth mechanism was suggested based on the scanning electron microscopy observations. Its thermoelectric properties were obtained at room-temperature with electrical conductivity (313.07 S center dot cm(-1)) and Seebeck coefficient (-163.44 mu V center dot K-1) respectively enhanced by 74.80% and 71.70% than the reference sample prepared by ordinary MBE method. (C) 2014 The Electrochemical Society. [DOI: 10.1149/2.0041408ssl] All rights reserved.
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