Abstract:This work has a focus on NiSi as a possible metallic contact for aggressively scaled complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies close to the middle of Si bandgap, the Schottky barrier height (SBH) of NiSi is rather large for both electron (similar to 0.65 eV) and hole (similar to 0.45 eV). Different approaches have therefore been intensively investigated in the literature aiming at reducing the effective SBH: dopant segregation (DS), surface passivation (SP), and alloying, in order to improve the carrier injection into the conduction channel of a field-effect transistor. The present work explores DS using B and As for the NiSi/Si contact system. The effects of C and N implantation into Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. A combined use of DS or SP with alloying could be considered for more effective control of effective SBH, but an examination of undesired compound formation and its probable consequences is necessary. Furthermore, an analysis of the metal silicides that have a small "intrinsic" SBH reveals that only a very small number of them are of practical interest as most of the silicides require either a high formation temperature or possess a high specific resistivity.

A More CMOS Process Compatible Scheme to Tune the Schottky Barrier Height of NiSi to Electrons by Means of Dopant Segregation (DS) Technique

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

NiSi/p<SUP>+</SUP>-Si(n<SUP>+</SUP>-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?

Thermal stability and dopant segregation for schottky diodes with ultrathin epitaxial NiSi2-y

Interaction of NiSi with dopants for metallic source/drain applications

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation